The objective of this educational module is to measure the Hall effect of germanium and determine the carrier concentration (and type) as a function of temperature. Germanium is an indirect bandgap semiconductor with a room temperature bandgap EG = 0.67 eV.
Several items are needed for this experiment, which include:
- A piece of semiconductor wafer. In the present case, we are using a p-type doped Ge wafer, but other samples that you may have access to will work.
- You may need a caliper to measure the semiconductor sample thickness. In our case, the sample wafer is 500 microns thick as measured by the vendor.
- Diamond scribe to assist in cleaving the semiconductor sample
- Cotton swabs and acetone to clean the semiconductor surface
- Silver paste and thin gauge wire
- Kapton tape and apiezon N grease
- Tweezers, toothpick (for spreading N grease)
- Latex or nitrile gloves for sample handling
- ETO transport puck
- Puck wiring test station and ohm meter (to test continuity of silver paste joints)
There are currently no comments.
No one has duplicated this experiment yet.
Like
Comment
I Did This
Share
Description
Files