Connecting Students with Materials Research
Hall Effect Measurement in Germanium
The objective of this educational module is to measure the Hall effect of germanium and determine the carrier concentration (and type) as a function of temperature. Germanium is an indirect bandgap semiconductor with a room temperature bandgap EG = 0.67 eV.
Several items are needed for this experiment, which include:
- A piece of semiconductor wafer. In the present case, we are using a p-type doped Ge wafer, but other samples that you may have access to will work.
- You may need a caliper to measure the semiconductor sample thickness. In our case, the sample wafer is 500 microns thick as measured by the vendor.
- Diamond scribe to assist in cleaving the semiconductor sample
- Cotton swabs and acetone to clean the semiconductor surface
- Silver paste and thin gauge wire
- Kapton tape and apiezon N grease
- Tweezers, toothpick (for spreading N grease)
- Latex or nitrile gloves for sample handling
- ETO transport puck
- Puck wiring test station and ohm meter (to test continuity of silver paste joints)
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